The solid-state ultraviolet detectors with silicon carbide avalanche photodiodes as the core have broad application prospects in flame detection, astronomical research, corona detection and even missile plume detection. But what is the array like? Next, the editor will give you some relevant knowledge.

　　 Although scholars at home and abroad have conducted extensive research on 4H-SiC-apd for UV detection, in recent years, most of the research work has focused on discrete devices. The characteristics of high pixel yield, low leakage current, and small breakdown voltage fluctuation of avalanche photodiode arrays are difficult to achieve. The previously reported 4H-SiC-APD arrays are usually smaller in size and fewer pixels.

　　 The high-performance 4H-SiC ultraviolet avalanche photodiode and 1×128 linear array were fabricated and researched. The 4H-SiC epitaxial layer was prepared by the CVD method, and the structure of the 4H-SiC-APD epitaxial layer was designed in detail.

　　 In addition, in order to obtain a uniform low defect density epitaxial layer, the growth conditions are optimized. Improve the device manufacturing process, including mesa corrosion and high-quality passivation.

　　Through the improvement of the 4H-SiC epitaxial layer material and device preparation process, the total length of the prepared 4H-SiC-apd and 1×128 linear array reaches 20mm, which has good performance.

The APD pixel gain of the array at room temperature exceeds 105, and the maximum quantum efficiency is 53%@285nm. In addition, the pixel output of the 1×1284h-sicapd linear array is 100%, and the dark current is less than 1na at a breakdown voltage of 95%. In the case of 0.3v, the breakdown voltage changes less.