By paying attention to and understanding the development history of photodiodes, we know why the components are produced, the defects in the application process and the improvement measures proposed for the shortcomings. These will be the reference basis for our research on photodiodes. Next, the editor summarized the development history of photodiodes, and you are interested to know about it.

1. The budding period (before 1975): The typical IV curve of avalanche mode appeared in 1957. The patent applied by Siemens, Germany, marked the appearance of the avalanche gain device; the APD photodiode device applied by Bell Labs in 1967 Since then, there have been some applications in other countries, but the number is limited. At this time, it is in the embryonic stage of APD.

2. Rapid growth period (1976~1989): With the improvement of silicon, germanium, GaAs material growth technology and the increase in demand for low light detection, APD device patent applications have entered a period of rapid development, especially the number of applications in Japan Dramatic increase.

　　3. Low period (1990~1999): As the research on APD devices based on silicon, germanium, and GaAs materials is becoming more and more perfect, and the development speed of new materials is getting slower and slower, the number of patent applications will inevitably fall into a trough.

4. Maturity period (2000-present): With the development of material growth technology, especially the maturity of MOCVD epitaxial technology, the growth technology of third-generation semiconductors such as GaN and SiC has been able to grow materials that meet the requirements of device preparation, APD The patent application of the device has also entered a stage of growth and maturity. On this basis, the patent application of the APD photodiode device has stabilized again.

　　 The above is the development history of APD photodiodes.